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| 2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-535 1st. Edition Features * Low on-resistance R DS(on) = 0.042 typ. * 4V gate drive devices. * High speed switching Outline DPAK-2 4 4 D 12 G 3 S 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Ta = 25C 3. Value at Ta = 25C, Rg 50 Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 60 20 15 60 15 15 19 25 150 -55 to +150 Unit V V A A A A mJ W C C EAR* Pch* Tch Tstg 2 2SK2926(L), 2SK2926(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 60 20 -- -- 1.5 -- -- 7 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.042 0.065 11 500 260 110 10 80 100 110 1.0 55 Max -- -- 10 10 2.5 0.055 0.11 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 15A, VGS = 0 I F = 15A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VDS = 60 V, VGS = 0 VGS = 16V, VDS = 0 I D = 1mA, VDS = 10V I D = 8A, VGS = 10V*1 I D = 8A, VGS = 4V*1 I D = 8A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 8A RL = 3.75 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr 3 2SK2926(L), 2SK2926(S) Main Characteristics Power vs. Temperature Derating 40 Pch (W) 1000 I D (A) 300 100 30 10 3 1 0.3 0 50 100 150 Tc (C) 200 DC PW Maximum Safe Operation Area 30 Channel Dissipation Drain Current 20 = 10 (1 sh ion ot Operation in ) (T c= this area is 25 limited by R DS(on) C ) Op 10 1 10 0 s 0 s 1 m s ms er at Case Temperature Ta = 25C 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 10 V 6 V 5 V 20 4 .5 V I D (A) 16 3.5 V 4V (A) 20 Typical Transfer Characteristics V DS = 10 V Pulse Test 16 12 ID Drain Current 12 Drain Current 8 3V 4 Pulse Test VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 8 Tc = 75C 25C 4 -25C 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 2SK2926(L), 2SK2926(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 2.0 Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.5 0.2 0.1 VGS = 4 V 10 V 1.6 1.2 I D = 20 A 0.8 0.05 0.4 10 A 5A 0.02 0.01 1 2 5 10 20 50 Drain Current I D (A) 100 0 12 4 8 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 I D = 10 A 5A Forward Transfer Admittance vs. Drain Current 20 10 5 Tc = -25 C 25 C 0.12 V GS = 4 V 0.08 2 1 0.5 0.1 0.2 75 C 0.04 10 V 0 -40 20 A 10 A 5 A V DS = 10 V Pulse Test 0.5 1 2 5 10 20 Drain Current I D (A) 0 40 80 120 160 Case Temperature Tc (C) 5 2SK2926(L), 2SK2926(S) Body to Drain Diode Reverse Recovery Time di / dt = 50 A / s V GS = 0, Ta = 25 C 2000 1000 Capacitance C (pF) 500 200 100 50 20 10 10 20 I DR (A) 5 0 VGS = 0 f = 1 MHz 10 20 30 40 50 Crss Ciss Typical Capacitance vs. Drain to Source Voltage 500 Reverse Recovery Time trr (ns) 200 100 50 20 10 Coss 5 0.1 0.2 0.5 1 2 Reverse Drain Current Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 100 I D = 15A 20 1000 300 Switching Time t (ns) Switching Characteristics 80 V GS 60 V DS V DD = 10 V 25 V 50 V 16 t d(off) 100 30 10 3 1 0.1 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.2 0.5 1 5 10 20 2 Drain Current I D (A) tf tr t d(on) Drain to Source Voltage 12 40 8 20 V DD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 4 0 400 0 6 Gate to Source Voltage 2SK2926(L), 2SK2926(S) Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) 50 Reverse Drain Current I DR (A) 200 I AP = 40 A V DD = 25 V duty < 1 % Rg > 50 Maximum Avalanche Energy vs. Channel Temperature Derating 40 10 V 30 5V 20 V GS = 0, -5 V 160 120 80 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 40 0 25 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 0 VDD 7 2SK2926(L), 2SK2926(S) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 ch - c(t) = s (t) * ch - c ch - c = 5 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout Vout Monitor Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10% 8 2SK2926(L), 2SK2926(S) Package Dimensions Unit: mm 1.7 0.5 6.5 0.5 5.4 0.5 2.3 0.2 0.55 0.1 5.5 0.5 1.7 0.5 1.15 0.1 0.8 0.1 3.1 0.5 16.2 0.5 4.7 0.5 6.5 0.5 5.4 0.5 2.3 0.5 0.55 0.1 5.5 0.5 9.5 0.5 1.2 Max 1.15 0.1 0.8 0.1 2.29 0.5 1.2 typ 0 ~ 0.25 0.55 0.1 2.5 0.5 2.29 0.5 2.29 0.5 0.55 0.1 2.29 0.5 L type S type Hitachi EIAJ ( L type) EIAJ ( S type) JEDEC DPAK-2 SC-63 SC-64 -- 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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